基于0.13µm CMOS技术的2.4 GHz E类功率放大器的功率增加效率提升

Hemad Heidari Jobaneh
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引用次数: 1

摘要

功率附加效率(PAE)是衡量功率放大器(PA)性能的重要指标之一。本文提出了一种提高PAE的新方法。此外,还研究了增加VDD以获得更多输出功率和更多PAE之间的权衡。此外,对输出电压和输出功率进行了新的精确计算。此外,描述了使用变压器等效电路的概念,以证明增加PAE的新方法是正确的。所设计的功率放大器(PA)工作频率为2.4GHz。利用高级设计系统(ADS)和MATLAB进行仿真。此外,采用台积电0.13 μ m CMOS工艺来完成该程序。epa类旨在获得两个不同的目标,包括更大的输出功率和更多的PAE。当VDD= 1.18 V时,输出功率为19.52 dBm, PAE为68.5%。最终,当VDD=4.4 V时,输出功率为31.24 dBm, PAE为62.7%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Power Added Efficiency Enhancement in a 2.4 GHz Class E Power Amplifier in 0.13µm CMOS Technology
Power-Added-Efficiency (PAE) is one of the most significant factors by which the performance of a Power Amplifier (PA) can be scrutinized. A new approach to increase PAE is proposed in this paper. Plus, the trade-off between increasing VDD for more output power and more PAE is examined. In addition, new and precise calculations for both output voltage and output power are achieved. Furthermore, the concept of using an equivalent circuit of a transformer is described to justify the new way to increase PAE. The designed Power Amplifier (PA) operates at 2.4GHz. The simulation is performed by Advanced Design System (ADS) and MATLAB. Plus, the TSMC 0.13 µm CMOS process is utilized to fulfil the procedure. The class E PA is designed to gain two different objectives, including more output power and more PAE. With VDD= 1.18 V the output power is 19.52 dBm and PAE is 68.5 %. Ultimately, with VDD=4.4 V the output power is 31.24 dBm and PAE is 62.7 %.
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