2-D potential model for short channel common double gate MOSFETs adapted to gate-oxide thickness symmetry

Existing compact models for double gate FinFETs assume uniform gate-oxide thickness on both the functional sides of the Fins. Any difference in oxide thickness between the sides is accommodated by fit parameters in the compact model. Though such approach is sufficient in saturation regime, a more physical approach is essential to account for short-channel effects and leakage currents at weak and moderate inversions. In this manuscript, we propose a 2-D closed form surface potential model for a more generic device, the common double gate MOSFETs which can physically account for the asymmetry in thickness between the gate-oxides. The model can be used to compute body potential useful in modeling the Short channel effects, up to an oxide thickness asymmetry of 50% and up to channel lengths of 20nm.