{"title":"采用采样光栅与上层结构光栅相结合的宽调谐soa集成DBR激光器","authors":"M. Gotoda, T. Nishimura, Y. Tokuda","doi":"10.1109/ISLC.2004.1382800","DOIUrl":null,"url":null,"abstract":"A 30 nm tunable laser diode utilizing front SG-DBR and rear SSG-DBR was demonstrated for the first time. High output power over 45 mW as well as good wavelength control was achieved with SMSR greater than 40 dB.","PeriodicalId":126641,"journal":{"name":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Widely tunable SOA-integrated DBR laser with combination of sampled-grating and superstructure grating\",\"authors\":\"M. Gotoda, T. Nishimura, Y. Tokuda\",\"doi\":\"10.1109/ISLC.2004.1382800\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 30 nm tunable laser diode utilizing front SG-DBR and rear SSG-DBR was demonstrated for the first time. High output power over 45 mW as well as good wavelength control was achieved with SMSR greater than 40 dB.\",\"PeriodicalId\":126641,\"journal\":{\"name\":\"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2004.1382800\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE 19th International Semiconductor Laser Conference, 2004. Conference Digest.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2004.1382800","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Widely tunable SOA-integrated DBR laser with combination of sampled-grating and superstructure grating
A 30 nm tunable laser diode utilizing front SG-DBR and rear SSG-DBR was demonstrated for the first time. High output power over 45 mW as well as good wavelength control was achieved with SMSR greater than 40 dB.