缺陷控制聚酰亚胺隧道阴极的超高电子发射效率

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-11 DOI:10.1109/IVNC.2004.1354921

A. Baba, T. Yoshida, T. Asano

{"title":"缺陷控制聚酰亚胺隧道阴极的超高电子发射效率","authors":"A. Baba, T. Yoshida, T. Asano","doi":"10.1109/IVNC.2004.1354921","DOIUrl":null,"url":null,"abstract":"In this paper, the ultra-high efficiency (38%) field electron emission was demonstrated from the defect-control polyimide tunnel cathode using the dc-voltage forming method. It was found that the ion irradiation condition of the polyimide film and the dc-forming condition are important to obtain ultra-high electron emission efficiency from the cathode.","PeriodicalId":137345,"journal":{"name":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ultra-high electron emission efficiency from defect controlled polyimide tunnel cathode\",\"authors\":\"A. Baba, T. Yoshida, T. Asano\",\"doi\":\"10.1109/IVNC.2004.1354921\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, the ultra-high efficiency (38%) field electron emission was demonstrated from the defect-control polyimide tunnel cathode using the dc-voltage forming method. It was found that the ion irradiation condition of the polyimide film and the dc-forming condition are important to obtain ultra-high electron emission efficiency from the cathode.\",\"PeriodicalId\":137345,\"journal\":{\"name\":\"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-07-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IVNC.2004.1354921\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IVNC.2004.1354921","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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摘要

本文采用直流电压成形的方法，证明了缺陷控制聚酰亚胺隧道阴极的超高场电子发射效率(38%)。研究发现，聚酰亚胺薄膜的离子辐照条件和直流形成条件对阴极获得超高的电子发射效率至关重要。

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Ultra-high electron emission efficiency from defect controlled polyimide tunnel cathode

In this paper, the ultra-high efficiency (38%) field electron emission was demonstrated from the defect-control polyimide tunnel cathode using the dc-voltage forming method. It was found that the ion irradiation condition of the polyimide film and the dc-forming condition are important to obtain ultra-high electron emission efficiency from the cathode.

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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