SOI和SOS CMOS LSI的辐射稳定性

2008 18th International Crimean Conference - Microwave & Telecommunication Technology Pub Date : 2008-11-18 DOI:10.1109/CRMICO.2008.4676555

A. Demchenko, V. Syakersky, S. Shvedov, V. Bondarenko, L. Dolgyi

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引用次数: 0

摘要

对不同SOI结构(SIMOX、Smart-Cut和Dele-Cut)和SOS结构下的CMOS SRAM 8k进行了比较研究。利用激光和x射线模拟器进行了辐射试验，以估计CMOS SRAM对辐射脉冲和总辐射剂量的稳定性。这些测试是在主动模式下进行的。SOI结构上SRAM样本的信息安全水平是SOS结构上SRAM样本的3倍。对总辐射剂量影响的研究表明，SOS和SOI结构的总辐射剂量水平为6middot104单位。

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Radiation stability of SOI and SOS CMOS LSI

Comparative study of CMOS SRAM 8 K for different SOI structures (SIMOX, Smart-Cut and Dele-Cut) and SOS structures has been carried out. Radiation tests have been provided using laser and x-ray simulators in order to estimate CMOS SRAM stability to radiation pulse and total radiation dose. The tests have been carried out in active mode. The level of information safety for SRAM samples on SOI structures was three times higher than that for the samples on SOS structures. Research of the influence of total radiation dose has shown that the level was of 6middot104 units for SOS and SOI structures.

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2008 18th International Crimean Conference - Microwave & Telecommunication Technology

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