原位氢蚀刻法远距离沉积非晶硅

The 24th Southeastern Symposium on and The 3rd Annual Symposium on Communications, Signal Processing Expert Systems, and ASIC VLSI Design System Theory Pub Date : 1992-03-01 DOI:10.1109/SSST.1992.712190

Y. Lo, W. Collis

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引用次数: 0

摘要

在远程等离子体增强化学气相沉积系统中，研究了氢等离子体对反应器腔的反应性冲洗效果，该系统用于沉积a- si:H薄膜。采用氢等离子体冲洗工艺制备的氢化非晶硅薄膜在暗电流-电压(I-V)测量中效果不明显。同时，测量显示氢等离子体冲洗的薄层缺陷减少了。

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Remote Hasma Deposited Amorphous Silicon with In-Situ Hydrogen Etching

We study the effects of using hydrogen plasma to reactively flush the reactor chamber in a remote plasma enhanced chemical vapor deposition system used for depositing thin film of a-Si:H. The thin film hydrogenated amorphous silicon with the hydrogen plasma flush process shows a little of effect in the dark current-voltage (I-V) measurements. And also, measurements show reduction of defects at the thin layer of the hydrogen-plasma flush.

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来源期刊

The 24th Southeastern Symposium on and The 3rd Annual Symposium on Communications, Signal Processing Expert Systems, and ASIC VLSI Design System Theory

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