mos控制双极功率器件的性能分析

Proceedings of 1995 International Conference on Power Electronics and Drive Systems. PEDS 95 Pub Date : 1995-02-21 DOI:10.1109/PEDS.1995.404942

P. Tan, Y.C. Liang

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引用次数: 1

摘要

MOS控制的双极功率器件将MOS和双极技术结合到一个单片结构中，以充分利用这两类器件的最佳特性。双极部分在低正向电压下提供高传导电流能力，而MOSFET组件使其能够以最小的栅极驱动要求实现电压控制。本文分析了三种mos控制双极器件，即绝缘栅双极晶体管(IGBT)、发射极开关晶闸管(EST)和n沟道mos控制晶闸管(NMCT)。突出显示了每个设备特有的某些功能。通过保持它们的内部参数尽可能相似，还可以对它们的性能进行比较

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Performance analysis of MOS-controlled bipolar power devices

MOS-controlled bipolar power devices combine MOS and bipolar technology into a monolithic structure to tap the best features from both classes of devices. The bipolar part renders high conduction current capabilities at low forward voltage while the MOSFET component makes it possible to implement voltage control with minimum gate drive requirements. In this paper, three types of MOS-controlled bipolar devices, namely the insulated gate bipolar transistor (IGBT), the emitter switched thyristor (EST) and the n-channel MOS-controlled thyristor (NMCT), are analysed. Certain features unique to each device are highlighted. By keeping their internal parameters as similar as possible, a comparison of their performances is also made.<>

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Proceedings of 1995 International Conference on Power Electronics and Drive Systems. PEDS 95

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