谐波负载对MESFET放大器输出功率的影响

1999 9th International Crimean Microwave Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.99EX363) Pub Date : 1900-01-01 DOI:10.1109/CRMICO.1999.815148

E.A. Svistov

{"title":"谐波负载对MESFET放大器输出功率的影响","authors":"E.A. Svistov","doi":"10.1109/CRMICO.1999.815148","DOIUrl":null,"url":null,"abstract":"The aim of this paper is to present results of a 2 GHz amplifier's output power calculations, up to phase of load reflection coefficient at 4 GHz and 6 GHz frequency. The amplifier is based on two MESFET devices, each having a 3.6 mm gate width and 2 GHz operating frequency. Contours of maximum and minimum output power have been determined. This paper describes the method of design of the amplifier's output circuit with frequency crossing 2:1 (2-4 GHz), which gives a high output power at 4 GHz without additional power loss, which is linked to the load phase at the second harmonic.","PeriodicalId":326430,"journal":{"name":"1999 9th International Crimean Microwave Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.99EX363)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An addition to the influence of harmonic loads on MESFET amplifiers output power\",\"authors\":\"E.A. Svistov\",\"doi\":\"10.1109/CRMICO.1999.815148\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The aim of this paper is to present results of a 2 GHz amplifier's output power calculations, up to phase of load reflection coefficient at 4 GHz and 6 GHz frequency. The amplifier is based on two MESFET devices, each having a 3.6 mm gate width and 2 GHz operating frequency. Contours of maximum and minimum output power have been determined. This paper describes the method of design of the amplifier's output circuit with frequency crossing 2:1 (2-4 GHz), which gives a high output power at 4 GHz without additional power loss, which is linked to the load phase at the second harmonic.\",\"PeriodicalId\":326430,\"journal\":{\"name\":\"1999 9th International Crimean Microwave Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.99EX363)\",\"volume\":\"94 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 9th International Crimean Microwave Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.99EX363)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.1999.815148\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 9th International Crimean Microwave Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.99EX363)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.1999.815148","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文的目的是给出一个2 GHz放大器的输出功率计算结果，直到4 GHz和6 GHz频率下负载反射系数的相位。放大器基于两个MESFET器件，每个器件具有3.6 mm栅极宽度和2 GHz工作频率。确定了最大和最小输出功率的轮廓。本文介绍了一种频率交叉2:1 (2-4 GHz)的放大器输出电路的设计方法，该电路在4 GHz时具有较高的输出功率，而不会产生与负载相位有关的二次谐波的额外功率损耗。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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An addition to the influence of harmonic loads on MESFET amplifiers output power

The aim of this paper is to present results of a 2 GHz amplifier's output power calculations, up to phase of load reflection coefficient at 4 GHz and 6 GHz frequency. The amplifier is based on two MESFET devices, each having a 3.6 mm gate width and 2 GHz operating frequency. Contours of maximum and minimum output power have been determined. This paper describes the method of design of the amplifier's output circuit with frequency crossing 2:1 (2-4 GHz), which gives a high output power at 4 GHz without additional power loss, which is linked to the load phase at the second harmonic.

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来源期刊

1999 9th International Crimean Microwave Conference 'Microwave and Telecommunication Technology'. Conference Proceedings (IEEE Cat. No.99EX363)

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