{"title":"一种高效率的常关式GaN-on-Si HEMT混合ic升压变换器，输出功率为425 w，工作频率为1mhz","authors":"B. Hughes, Y. Yoon, D. Zehnder, K. Boutros","doi":"10.1109/CSICS.2011.6062460","DOIUrl":null,"url":null,"abstract":"A 2:1 351 V hard-switched boost converter was constructed using high-voltage GaN high-electron-mobility transistors grown on Si substrates and GaN Schottky diodes grown on Sapphire substrates. The high speed and low on-resistance of the GaN devices enables extremely fast switching times and low losses, resulting in a high conversion efficiency of 95% with 425-W output power at 1 MHz. The boost converter has a power density of 175 W/in3. To our knowledge, these results are the best reported on GaN devices, and the highest for 1MHz switching.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"31","resultStr":"{\"title\":\"A 95% Efficient Normally-Off GaN-on-Si HEMT Hybrid-IC Boost-Converter with 425-W Output Power at 1 MHz\",\"authors\":\"B. Hughes, Y. Yoon, D. Zehnder, K. Boutros\",\"doi\":\"10.1109/CSICS.2011.6062460\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 2:1 351 V hard-switched boost converter was constructed using high-voltage GaN high-electron-mobility transistors grown on Si substrates and GaN Schottky diodes grown on Sapphire substrates. The high speed and low on-resistance of the GaN devices enables extremely fast switching times and low losses, resulting in a high conversion efficiency of 95% with 425-W output power at 1 MHz. The boost converter has a power density of 175 W/in3. To our knowledge, these results are the best reported on GaN devices, and the highest for 1MHz switching.\",\"PeriodicalId\":275064,\"journal\":{\"name\":\"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"92 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"31\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2011.6062460\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2011.6062460","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 95% Efficient Normally-Off GaN-on-Si HEMT Hybrid-IC Boost-Converter with 425-W Output Power at 1 MHz
A 2:1 351 V hard-switched boost converter was constructed using high-voltage GaN high-electron-mobility transistors grown on Si substrates and GaN Schottky diodes grown on Sapphire substrates. The high speed and low on-resistance of the GaN devices enables extremely fast switching times and low losses, resulting in a high conversion efficiency of 95% with 425-W output power at 1 MHz. The boost converter has a power density of 175 W/in3. To our knowledge, these results are the best reported on GaN devices, and the highest for 1MHz switching.
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