深亚微米CMOS晶体管双金属栅极技术

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852774

Q. Lu, Y. Yeo, P. Ranade, H. Takeuchi, T. King, C. Hu, S.C. Song, H. Luan, D. Kwong

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引用次数: 47

摘要

采用自对准工艺制备了具有快速热化学气相沉积(RTCVD) Si/sub 3/N/sub 4/栅极介质的双金属栅极CMOS器件。N- mosfet和P-MOSFET的栅极分别为Ti和Mo。载流子迁移率可与SiO/ sub2 /通用迁移率模型预测的结果相媲美。C-V特性与考虑量子力学效应的模拟结果很好地吻合，并且清楚地显示了金属相对于多晶硅栅极的优势。

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Dual-metal gate technology for deep-submicron CMOS transistors

Dual-metal gate CMOS devices with rapid-thermal chemical vapor deposited (RTCVD) Si/sub 3/N/sub 4/ gate dielectric were fabricated using a self-aligned process. The gate electrodes are Ti and Mo for the N- and P-MOSFET respectively. Carrier mobilities are comparable to that predicted by the universal mobility model for SiO/sub 2/. C-V characteristics show good agreement with a simulation that takes quantum-mechanical effects into account, and clearly display the advantage of metal over poly-Si gates.

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来源期刊

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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