Parasitic elements extraction of AlGaN/GaN HEMTs on SiC substrate using only pinch-off S-parameter measurements

In this paper, a parameter extraction method for GaN HEMTs is developed. The main advantage of this approach is its accuracy, reliability and dependence on only pinch-off Sparameter measurements to extract the parasitic elements of the device. The extraction results are compared with other extraction results based on pinch-off and forward measurements. The comparison result demonstrates the validity of the proposed method for small- and large-signal modeling of GaN devices.