一种6v内嵌90nm硅纳米晶非易失性存储器

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269353

R. Muralidhar, R. Steimle, M. Sadd, R. Rao, C. Swift, E. Prinz, J. Yater, L. Grieve, K. Harber, B. Hradsky, S. Straub, B. Acred, W. Paulson, W. Chen, L. Parker, S. Anderson, M. Rossow, T. Merchant, M. Paransky, T. Huynh, D. Hadad, Ko-Min Chang, B. White

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引用次数: 64

摘要

采用传统90纳米和0.25 /spl mu/m工艺技术的第一个功能性6 V, 4 Mb硅纳米晶非易失性存储器阵列已经生产出来。该技术可以在浮动栅存储器中使用传统技术进行编程和擦除，并且可以大大降低90纳米及以上节点的嵌入式闪存的成本。

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A 6 V embedded 90 nm silicon nanocrystal nonvolatile memory

The first functional 6 V, 4 Mb silicon nanocrystal based nonvolatile memory arrays using conventional 90 nm and 0.25 /spl mu/m process technologies have been produced. The technology can be programmed and erased using conventional techniques in floating gate memories and can substantially reduce the cost of embedded flash at the 90 nm node and beyond.

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IEEE International Electron Devices Meeting 2003

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