片上系统的高性能横杆设计

P. Wijetunga
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引用次数: 18

摘要

提出了一种新的低摆幅通管逻辑风格,用于设计用于片上系统应用的高性能交叉开关。新的通型晶体管结构采用电流开关和端到端摆幅恢复来提高交叉棒性能。该架构在0.35和0.25 /spl mu/m CMOS技术上进行了验证。0.35 /spl mu/m CMOS中的4-b 4x4横条开关占用1.4 /spl mu/m/sup 2/的面积,实现了36gb /s。分析表明,新的逻辑风格可用于0.18 /spl mu/m及更低CMOS技术的多tb /s交叉开关设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
High-performance crossbar design for system-on-chip
A new low-swing pass-transistor logic style for designing high-performance crossbar switches for system-on-chip applications is proposed. The new pass-transistor architecture uses current-switching and end-to-end swing restoration to improve the crossbar performance. The architecture is verified in 0.35 and 0.25 /spl mu/m CMOS technology. The 4-b 4x4 crossbar switch in 0.35 /spl mu/m CMOS occupied an area of 1.4 /spl mu/m/sup 2/ and achieved 36 Gb/s. Analysis suggests that the new logic style can be used to design multi-Tb/s crossbar switches in 0.18 /spl mu/m and lower CMOS technology.
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