{"title":"用压电光热光谱法研究了GaInNAs/GaAs SQW中非辐射电子跃迁的温度变化","authors":"T. Ikari, K. Imai, S. Fukushima, M. Kondow","doi":"10.1109/ISDRS.2003.1272072","DOIUrl":null,"url":null,"abstract":"In this paper, we report on the temperature variation of the piezoelectric photothermal spectroscopy (PPTS) of GaInNAs SQW structure with 5 m thickness and discuss the electron transition mechanism in the well from the viewpoint of nonradiative recombination.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"180 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Temperature variation of nonradiative electron transitions in GaInNAs/GaAs SQW investigated by a piezoelectric photothermal spectroscopy\",\"authors\":\"T. Ikari, K. Imai, S. Fukushima, M. Kondow\",\"doi\":\"10.1109/ISDRS.2003.1272072\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we report on the temperature variation of the piezoelectric photothermal spectroscopy (PPTS) of GaInNAs SQW structure with 5 m thickness and discuss the electron transition mechanism in the well from the viewpoint of nonradiative recombination.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"180 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272072\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272072","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Temperature variation of nonradiative electron transitions in GaInNAs/GaAs SQW investigated by a piezoelectric photothermal spectroscopy
In this paper, we report on the temperature variation of the piezoelectric photothermal spectroscopy (PPTS) of GaInNAs SQW structure with 5 m thickness and discuss the electron transition mechanism in the well from the viewpoint of nonradiative recombination.
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