化学气相沉积法在电镀铜表面合成石墨烯薄膜

The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems Pub Date : 2013-04-07 DOI:10.1109/NEMS.2013.6559693

Wenrong Wang, C. Liang, Tie Li, Heng Yang, N. Lu, Yuelin Wang

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引用次数: 0

摘要

本文采用化学气相沉积(CVD)的方法，在甲烷、氢气和氩气的混合气体中，以电镀Cu为衬底生长石墨烯。研究了退火后电镀铜的不同晶粒尺寸。指出生长温度、生长时间和甲烷浓度是影响石墨烯结构完善的关键参数。

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Graphene films synthesized on electroplated Cu by chemical vapor deposition

In this paper, electroplated Cu was used as substrate to grow graphene by chemical vapor deposition (CVD) with a mixture gas of methane, hydrogen and argon. The different electroplated Cu grain size after annealing was studied. We present the growth temperature, growth time and methane concentration are key parameters that affect the structural perfection of graphene.

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The 8th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems

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