功率元件低温模具连接:Cu-Sn-In固-液扩散连接

2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) Pub Date : 2022-10-23 DOI:10.1109/ASDAM55965.2022.9966765

F. Emadi, S. Liu, A. Klami, N. Tiwary, V. Vuorinen, M. Paulasto-Kröckel

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引用次数: 1

摘要

有限元模拟结果表明，降低焊接温度可显著降低焊接残余应力。因此，采用低温Cu-Sn-In slip工艺，在不同的键合条件下，实现Si与Si、Si与蓝宝石的键合。研究了接头的显微组织演变和热力学性能。结果表明，Cu-Sn-In滑动键由单个Cu6(Sn, In)5 IMC相组成，具有较高的结合强度;此外，在滑动键合中形成的Cu6(Sn, In)5的硬度和杨氏模量略高于二元Cu6Sn5。

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Low-temperature die attach for power components: Cu-Sn-In solid-liquid interdiffusion bonding

Based on the finite element (FE) simulations done in this work, lowering the bonding temperature significantly decreases the bonding induced residual stresses. Therefore, low temperature Cu-Sn-In SLID process was utilized to bond Si to Si and Si to sapphire under various bonding conditions. The microstructural evolution and the (thermo-) mechanical properties of the joints were studied. The results showed that the Cu-Sn-In SLID bonds composed of a single Cu6(Sn, In)5 IMC phase with high joint strength. Furthermore, the hardness and Young's modulus of Cu6(Sn, In)5 formed in the SLID bonding were measured to be slightly higher than that of binary Cu6Sn5.

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2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)

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