{"title":"利用SMES产生高功率脉冲","authors":"H. Salbert, K. Jungst","doi":"10.1109/MODSYM.1994.597040","DOIUrl":null,"url":null,"abstract":"A model of a power modulator for linear accelerators that uses a SMES ( Superconducting Magnetic Energy Storage ) is being developed. It will generate 2 ms long, 3 kV / 300 A power pulses with a repetition rate of 10 Hz. For this device a fast IGBT-power-switch and a SMES are under development. The IGBT-power-switch consists of IGBT in parallel and in serial connection. The SMES is designed for ramping operations of more than 30 T/s.","PeriodicalId":330796,"journal":{"name":"Twenty-First International Power Modulator Symposium, Conference","volume":"351 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Generation of High Power Pulses Using a SMES\",\"authors\":\"H. Salbert, K. Jungst\",\"doi\":\"10.1109/MODSYM.1994.597040\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A model of a power modulator for linear accelerators that uses a SMES ( Superconducting Magnetic Energy Storage ) is being developed. It will generate 2 ms long, 3 kV / 300 A power pulses with a repetition rate of 10 Hz. For this device a fast IGBT-power-switch and a SMES are under development. The IGBT-power-switch consists of IGBT in parallel and in serial connection. The SMES is designed for ramping operations of more than 30 T/s.\",\"PeriodicalId\":330796,\"journal\":{\"name\":\"Twenty-First International Power Modulator Symposium, Conference\",\"volume\":\"351 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-06-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Twenty-First International Power Modulator Symposium, Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MODSYM.1994.597040\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Twenty-First International Power Modulator Symposium, Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MODSYM.1994.597040","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A model of a power modulator for linear accelerators that uses a SMES ( Superconducting Magnetic Energy Storage ) is being developed. It will generate 2 ms long, 3 kV / 300 A power pulses with a repetition rate of 10 Hz. For this device a fast IGBT-power-switch and a SMES are under development. The IGBT-power-switch consists of IGBT in parallel and in serial connection. The SMES is designed for ramping operations of more than 30 T/s.