300 mm Wafer-scale In-situ CVD Growth Achieving 5.1×10-10 Ω-cm2 P-Type Contact Resistivity: Record 2.5×1021 cm-3 Active Doping and Demonstration on Highly-Scaled 3D Structures

For the first time, we have developed a novel growth technique of Si1-xGex having active boron (B) doping concentration (NA) higher than 2×10²¹ cm^-3. We achieve (1) uniform B doping and Ge composition in the epi-growth direction, (2) excellent uniformities in Si1-xGex thickness and resistivity across the entire 300 mm wafer, (3) an ultra-low as-deposited specific contact resistivity (ρc) of 5.1×10^-10 Ω-cm² on the sample with the highest NA of 2.5×10²¹ cm^-3, and (4) successful selective growth on the advanced 3D structures with excellent conformality and thickness controllability.