工艺可变性对物理不可克隆功能(puf)的FinFET 6T SRAM单元的影响

2017 12th International Conference on Computer Engineering and Systems (ICCES) Pub Date : 2017-12-01 DOI:10.1109/ICCES.2017.8275272

M. Faragalla, M. Ewais, H. Ragai, M. S. Badran, H. Issa

{"title":"工艺可变性对物理不可克隆功能(puf)的FinFET 6T SRAM单元的影响","authors":"M. Faragalla, M. Ewais, H. Ragai, M. S. Badran, H. Issa","doi":"10.1109/ICCES.2017.8275272","DOIUrl":null,"url":null,"abstract":"The behavior of 6T SRAM cells in presence of process variability for physical unclonable functions (PUFs) is analyzed on the 16 nm FinFET technology. Both systematic and random threshold voltage variations are considered in this analysis. Randomness prosperity of the secret keys generated from the SRAM cell is tested. Supply voltage ramp-up impact on the cells start-up values is also analyzed at different mismatch amounts.","PeriodicalId":170532,"journal":{"name":"2017 12th International Conference on Computer Engineering and Systems (ICCES)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Impact of process variability on FinFET 6T SRAM cells for physical unclonable functions (PUFs)\",\"authors\":\"M. Faragalla, M. Ewais, H. Ragai, M. S. Badran, H. Issa\",\"doi\":\"10.1109/ICCES.2017.8275272\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The behavior of 6T SRAM cells in presence of process variability for physical unclonable functions (PUFs) is analyzed on the 16 nm FinFET technology. Both systematic and random threshold voltage variations are considered in this analysis. Randomness prosperity of the secret keys generated from the SRAM cell is tested. Supply voltage ramp-up impact on the cells start-up values is also analyzed at different mismatch amounts.\",\"PeriodicalId\":170532,\"journal\":{\"name\":\"2017 12th International Conference on Computer Engineering and Systems (ICCES)\",\"volume\":\"98 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 12th International Conference on Computer Engineering and Systems (ICCES)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCES.2017.8275272\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 12th International Conference on Computer Engineering and Systems (ICCES)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCES.2017.8275272","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

在16纳米FinFET技术上，分析了6T SRAM电池在物理不可克隆功能(puf)的工艺变化情况下的行为。在分析中考虑了系统和随机阈值电压变化。测试了从SRAM单元生成的密钥的随机性繁荣度。在不同的失配量下，还分析了电源电压上升对电池启动值的影响。

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Impact of process variability on FinFET 6T SRAM cells for physical unclonable functions (PUFs)

The behavior of 6T SRAM cells in presence of process variability for physical unclonable functions (PUFs) is analyzed on the 16 nm FinFET technology. Both systematic and random threshold voltage variations are considered in this analysis. Randomness prosperity of the secret keys generated from the SRAM cell is tested. Supply voltage ramp-up impact on the cells start-up values is also analyzed at different mismatch amounts.

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2017 12th International Conference on Computer Engineering and Systems (ICCES)

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