载流子浓度对空穴导电性硅片机械强度影响机理的研究

Quality. Innovation. Education Pub Date : 1900-01-01 DOI:10.31145/1999-513x-2022-1-68-72

O. G. Kazakov, A. V. Rad’kov, N.O. Rad'kova

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引用次数: 0

摘要

探讨了机械作用下载流子浓度对硅片机械强度影响的机理。考虑了孔浓度对微裂纹长度和硅片机械强度的影响。在机械作用下，结构缺陷(孔洞)转移到较高的机械应力区域。

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THE INVESTIGATION OF THE INFLUENCE`S MECHANISM OF THE CONCENTRATION OF CHARGE CARRIERS ON THE MECHANICAL STRENGTH OF SILICON WAFERS WITH HOLE CONDUCTIVITY

The article discusses the mechanism of the influence of the concentration of charge carriers on the mechanical strength of silicon wafers under mechanical action. The effect of the hole concentration on the length of a micro crack and the mechanical strength of silicon wafers is considered. Structural defects (holes) are shifted to the region of higher mechanical stresses under mechanical action.

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Quality. Innovation. Education

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