一种32A 5v输入，94.2%峰值效率的高频功率转换器模块，具有封装集成的低压GaN NMOS功率晶体管

2021 Symposium on VLSI Circuits Pub Date : 2021-06-13 DOI:10.23919/VLSICircuits52068.2021.9492350

Nachiket V. Desai, H. Krishnamurthy, William J. Lambert, Jingshu Yu, H. Then, N. Butzen, Sheldon Weng, C. Schaef, N. Nidhi, M. Radosavljevic, J. Rode, J. Sandford, K. Radhakrishnan, K. Ravichandran, B. Sell, J. Tschanz, V. De

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引用次数: 2

摘要

5v输入、高频、高密度(9A/mm2)降压变换器采用低压GaN功率晶体管(FoM比Si好5-10倍)和片上栅极箝位，集成了4mm × 4mm封装的CMOS伴随芯片，在3MHz开关频率下，在40nH电感的情况下，实现了5Vin/1Vout的94.2%峰值效率。

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A 32A 5V-Input, 94.2% Peak Efficiency High-Frequency Power Converter Module Featuring Package-Integrated Low-Voltage GaN NMOS Power Transistors

A 5V-input, high-frequency, high-density (9A/mm2) buck converter featuring a low-voltage GaN power transistor (with 5-10× better FoM than Si) with on-die gate clamps, integrated with a CMOS companion die in 4mm × 4mm package, achieves 94.2% peak efficiency for 5Vin/1Vout at 3MHz switching frequency with a 40nH inductor.

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2021 Symposium on VLSI Circuits

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