FinFET电流镜设计与评估

A. Marshall, M. Kulkarni, M. Campise, R. Cleavelin, C. Duvvury, H. Gossner, M. Gostkowski, G. Knoblinger, C. Pacha, C. Russ, K. Schruefer, T. Schulz, K. VonArnim, B. Wilks, W. Xiong
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引用次数: 6

摘要

随着对更小的几何形状和改进电路性能的趋势继续,研究的一个选择是在SOI衬底上的多栅极场效应管。SOI由于其固有的低噪声和易于集成模拟,数字,RF和电源电路而适用于SOC系统。模拟电路的一个关键要求是精确的电流镜像。本文介绍了全耗尽型FinFET电流反射镜的特性。硅FinFET电流镜和它们的块状平面对应物具有相似的性能和匹配:这是这种材料上模拟电路的重要要求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
FinFET current mirror design and evaluation
With trends toward smaller geometries and improved circuit performance continuing, an option being investigated is multigate FETs on SOI substrates. SOI lends itself to SOC systems due to its inherently lower noise and ease of integration of analog, digital, RF and power circuits. A critical analog circuit requirement is accurate current mirroring. Here characteristics of fully depleted FinFET current mirrors are presented. Silicon FinFET current mirrors and their bulk planar counterparts have similar performance and matching: a vital requirement for analog circuitry on this type of material.
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