FBAR谐振腔耗散功率对离散振荡器相位噪声的影响

R. Parker, L. Callaghan, F. Bi, S. Ortiz, Frank Ha, N. Kumbhat, Jeff LaTourrette, M. Unkrich, Choon Chowe Chen, G. Ong
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引用次数: 2

摘要

我们提出了单端和平衡配置的改进Colpitts电压控制振荡器,利用零漂移fbar,与大批量生产兼容。这些振荡器的谐振器跨越频率在384 MHz和3900 MHz之间,这表明温度补偿FBAR在振荡器应用的十年频率范围内是有用的。在1 GHz至2.5 GHz范围内,我们观察到平均抖动小于10 fsec(在12 kHz至20 MHz偏移上集成),最佳设备的性能为5.5 fs。谐振器面积为27000平方微米,封装尺寸为0.43 × 0.35 × 0.23毫米。振荡器的设计支持温度范围从-40到85°C。由于谐振器能够在高达25 mW的耗散功率值下保持线性,因此可以实现低至-185 dBc/Hz @ 10 MHz的远载波相位噪声。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effects of FBAR resonator dissipated power on discrete oscillator phase noise
We present single-ended and balanced configurations of modified Colpitts voltage controlled oscillators utilizing zero drift FBARs that are compatible with high volume manufacturing. These oscillators have been built with resonators spanning frequencies between 384 MHz and 3900 MHz, demonstrating that temperature compensated FBAR is useful over a decade frequency range for oscillator applications. Over the 1 GHz to 2.5 GHz range, we have observed mean jitter less than 10 fsec (integrated over a 12 kHz to 20 MHz offset), with the best devices demonstrating performance of 5.5 fs. The resonator is 27,000 square microns in a .43 × .35 × .23 mm package. The oscillators are designed to support a temperature range from -40 to 85°C. Due to the ability of the resonator to remain linear at dissipated power values up to 25 mW, far-from-carrier phase noise as low as -185 dBc/Hz @ 10 MHz has been achieved.
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