{"title":"随机记忆器件的吸收马尔可夫链模型","authors":"Adil Malik, C. Papavassiliou, S. Stathopoulos","doi":"10.1109/mocast54814.2022.9837672","DOIUrl":null,"url":null,"abstract":"In this paper we elaborate and verify a data-driven modelling approach, pertaining to the stochastic trajectory of the memristance upon the application of pulses. Our proposed approach is to model the memristor’s behaviour as a time-homogeneous Markov chain. We introduce a simplified method that estimates the states and the state transition probabilities of the model from device measurements. We show that such a memristor model, generally corresponds to an absorbing Markov chain, the physical implications of which are also discussed. We apply this modelling methodology to real-world Pt/TiO2/Pt memristors and present results that validate its effectiveness in capturing the stochastic features of these devices over various timescales.","PeriodicalId":122414,"journal":{"name":"2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An Absorbing Markov Chain Model for Stochastic Memristive Devices\",\"authors\":\"Adil Malik, C. Papavassiliou, S. Stathopoulos\",\"doi\":\"10.1109/mocast54814.2022.9837672\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we elaborate and verify a data-driven modelling approach, pertaining to the stochastic trajectory of the memristance upon the application of pulses. Our proposed approach is to model the memristor’s behaviour as a time-homogeneous Markov chain. We introduce a simplified method that estimates the states and the state transition probabilities of the model from device measurements. We show that such a memristor model, generally corresponds to an absorbing Markov chain, the physical implications of which are also discussed. We apply this modelling methodology to real-world Pt/TiO2/Pt memristors and present results that validate its effectiveness in capturing the stochastic features of these devices over various timescales.\",\"PeriodicalId\":122414,\"journal\":{\"name\":\"2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/mocast54814.2022.9837672\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/mocast54814.2022.9837672","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An Absorbing Markov Chain Model for Stochastic Memristive Devices
In this paper we elaborate and verify a data-driven modelling approach, pertaining to the stochastic trajectory of the memristance upon the application of pulses. Our proposed approach is to model the memristor’s behaviour as a time-homogeneous Markov chain. We introduce a simplified method that estimates the states and the state transition probabilities of the model from device measurements. We show that such a memristor model, generally corresponds to an absorbing Markov chain, the physical implications of which are also discussed. We apply this modelling methodology to real-world Pt/TiO2/Pt memristors and present results that validate its effectiveness in capturing the stochastic features of these devices over various timescales.