S. Yuvaraja, Vishal Khandelwal, S. Krishna, Yi Lu, Zhiyuan Liu, Mritunjay Kumar, Dhanu Chettri, Xiao Tang, Glen Issac Maciel Garcia, Che-Hao Liao, Xiaohang Li
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Demonstration of Ga2O3 trigate transistors on (100) silicon substrates
In this paper we demonstrated the UWBG Ga2O3 trigate transistors heterogeneously integrated on silicon substrate. This trigate transistor operates in depletion mode having decent Ion/Ioff ratio (105) and high transconductance (1 μS). Followed by the mobility is around 1.2 cm2/V. s. This work suggests that the ultrawide bandgap oxide transistors can be fabricated on various heterogenous substrates to achieve highly integrated, low cost, and robust electronics.
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