{"title":"50GHz以下场效应管小信号建模的神经方法研究","authors":"Z. Marinković, G. Crupi, A. Caddemi, V. Markovic","doi":"10.1109/NEUREL.2010.5644101","DOIUrl":null,"url":null,"abstract":"The aim of this paper is to discuss and compare two neural approaches applied in small-signal modelling of microwave FETs. One of them is completely based on artificial neural networks, while the other is a hybrid model putting together artificial neural networks and an equivalent circuit representation of a microwave transistor. Devices with different gate width are considered in this paper. Different modelling aspects are compared, with special emphasis on the model development procedure and model accuracy.","PeriodicalId":227890,"journal":{"name":"10th Symposium on Neural Network Applications in Electrical Engineering","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"On the neural approach for FET small-signal modelling up to 50GHz\",\"authors\":\"Z. Marinković, G. Crupi, A. Caddemi, V. Markovic\",\"doi\":\"10.1109/NEUREL.2010.5644101\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The aim of this paper is to discuss and compare two neural approaches applied in small-signal modelling of microwave FETs. One of them is completely based on artificial neural networks, while the other is a hybrid model putting together artificial neural networks and an equivalent circuit representation of a microwave transistor. Devices with different gate width are considered in this paper. Different modelling aspects are compared, with special emphasis on the model development procedure and model accuracy.\",\"PeriodicalId\":227890,\"journal\":{\"name\":\"10th Symposium on Neural Network Applications in Electrical Engineering\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"10th Symposium on Neural Network Applications in Electrical Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NEUREL.2010.5644101\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"10th Symposium on Neural Network Applications in Electrical Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NEUREL.2010.5644101","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
On the neural approach for FET small-signal modelling up to 50GHz
The aim of this paper is to discuss and compare two neural approaches applied in small-signal modelling of microwave FETs. One of them is completely based on artificial neural networks, while the other is a hybrid model putting together artificial neural networks and an equivalent circuit representation of a microwave transistor. Devices with different gate width are considered in this paper. Different modelling aspects are compared, with special emphasis on the model development procedure and model accuracy.
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