模拟应用的基于物理的连续分析梯度通道SOI nMOSFET模型

Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611) Pub Date : 2002-08-07 DOI:10.1109/ICCDCS.2002.1004044

M. Pavanello, B. Iñíguez, J. Martino, D. Flandre

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引用次数: 7

摘要

本文提出了一种用于长沟道梯度沟道(GC)绝缘子上硅(SOI) nmosfet模拟仿真的连续模型。该模型基于两个具有不同特性的传统全耗尽(FD) SOI nMOSFET的一系列关联，代表GC nMOSFET通道区域的每个部分。MEDICI二维数值模拟和实验结果验证了该模型的有效性。

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A physically-based continuous analytical graded-channel SOI nMOSFET model for analog applications

In this work a continuous model for analog simulation of long-channel Graded-Channel (GC) Silicon-On-Insulator (SOI) nMOSFETs is presented. The model is based in a series association of two conventional fully-depleted (FD) SOI nMOSFETs with different characteristics, representing each part of the GC nMOSFET channel region. MEDICI numerical bidimensional simulations and experimental results are used to validate the proposed model.

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Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611)

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