一个简单的MOS实现的电流控制忆阻器仿真器

A. Hussein, M. Fouda
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引用次数: 30

摘要

基于忆阻器的电路由于其时变电阻和存储特性,在电路理论中是一个很有前途的课题,在不同的应用中都很有用。由于缺乏忆阻器样本,因此用仿真器代替忆阻器样本是非常有用的。此外,以前的仿真器是使用商用现成组件实现的。本文提出了一种新的简单MOS实现方法来模拟电流控制的忆阻器行为。所提出的MOS仿真器采用台积电0.13μm技术实现,双电源±1.5V,易于与任何其他集成电路集成。所提出的仿真器可以针对任何所需的工作频率进行调优,无论是低频率还是高频率。推导了该仿真器的数学模型。此外,在基于忆阻器的电压控制弛豫振荡器中测试了该仿真器的功能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A simple MOS realization of current controlled memristor emulator
Memristor based circuits is a promising topic in circuit theory due to the time variant resistance and the storage property which is useful in different applications. Due to the lack of memristor samples, the emulators are very useful to be used instead of memristor samples. Moreover the previous emulators are implemented using commercial off the shelf components. In this paper, a new simple MOS realization to emulate current controlled memristor behavior is proposed. The proposed MOS emulator is implemented using TSMC 0.13μm technology with dual supply ±1.5V which can be easily integrated with any other integrated circuits. The proposed emulator can be tuned for any desired working frequency either low or high frequencies. The mathematical model of the proposed emulator is derived. Furthermore, the functionality of the proposed emulator is tested in memristor-based Voltage controlled relaxation oscillator.
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