{"title":"晶闸管动态特性的一维分析","authors":"H. Fukui, M. Naito, Y. Terasawa","doi":"10.1109/IEDM.1977.189239","DOIUrl":null,"url":null,"abstract":"The dynamic behavior of a thyristor is numerically analyzed by solving a one-dimensional Poisson's equation and one-dimensional time-dependent continuity equations. The calculated results of the gate turn-on, dv/dt triggering and reverse recovery characteristics are compared with the experimental results. The advantage of this one-dimensional analysis method is that the dynamic characteristics of a thyristor with an arbitrary shorted emitter resistance and an arbitrary impurity profile can be analyzed.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"145 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"One-dimensional analysis of dynamic behavior of a thyristor\",\"authors\":\"H. Fukui, M. Naito, Y. Terasawa\",\"doi\":\"10.1109/IEDM.1977.189239\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The dynamic behavior of a thyristor is numerically analyzed by solving a one-dimensional Poisson's equation and one-dimensional time-dependent continuity equations. The calculated results of the gate turn-on, dv/dt triggering and reverse recovery characteristics are compared with the experimental results. The advantage of this one-dimensional analysis method is that the dynamic characteristics of a thyristor with an arbitrary shorted emitter resistance and an arbitrary impurity profile can be analyzed.\",\"PeriodicalId\":218912,\"journal\":{\"name\":\"1977 International Electron Devices Meeting\",\"volume\":\"145 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1977.189239\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1977.189239","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
One-dimensional analysis of dynamic behavior of a thyristor
The dynamic behavior of a thyristor is numerically analyzed by solving a one-dimensional Poisson's equation and one-dimensional time-dependent continuity equations. The calculated results of the gate turn-on, dv/dt triggering and reverse recovery characteristics are compared with the experimental results. The advantage of this one-dimensional analysis method is that the dynamic characteristics of a thyristor with an arbitrary shorted emitter resistance and an arbitrary impurity profile can be analyzed.
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