用于片上和片外EMI预测的I/O互连的建模和联合仿真

S. Kwak, J. Jo, Soyoung Kim
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引用次数: 3

摘要

本文提出了一种建模和联合仿真方法来预测片上互连开关活动产生的电磁干扰噪声。该模型包括I/O驱动和片上互连负载的模型,PKG和测试PCB的模型,以及传导和辐射EMI仿真。利用该模型的仿真结果,可以优化I/O驱动器和互连设计,以达到最小的芯片级EMI噪声。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling and co-simulation of I/O interconnects for on-chip and off-chip EMI prediction
In this paper, modeling and co-simulation methodology is proposed to predict EMI noise from the switching activity of on-chip interconnects. The proposed model includes the model for I/O driver and the on-chip interconnect load, the PKG and the test PCB, and the conducted and radiated EMI simulation. Using the simulation results of the proposed model, the I/O driver and the interconnect design can be optimized for minimum chip level EMI noise.
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