PSN低功率锁存器的性能研究

Mithilesh Kumar, A. Majumder, Abir J. Mondal
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引用次数: 1

摘要

这项工作描述了一个低功率锁存器耦合到一个典型的PDN的工作。所提出的锁存器采用一种新的电流控制逻辑电路,该电路从电源电压(Vdd)中提取恒定电流。在90nm CMOS技术和Vdd为1.1V的条件下进行仿真,平均功率和延迟分别约为454.4μW和62.8ps。随后,突然的电流斜坡导致接近芯片的有效电源电压振荡。注意到Ldi/dt对延迟的影响最小。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Performances of a Low Power Latch due to PSN
This work describes the working of a low power latch coupled to a typical PDN. The proposed latch is build using a new current steering logic circuit, which draws a constant current from the power supply voltage (Vdd). Simulated in a 90nm CMOS technology and Vdd of 1.1V, the average power and delay are noted to be about 454.4μW and 62.8ps, respectively. Subsequently, a sudden current ramp causes the effective supply voltage close to the die to oscillate. The Ldi/dt is noted to have a minimal effect on the delay.
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