两种给受体电子转移系统中光子门控光谱空穴燃烧的光产物

Yongle Pan, You-yuan Zhao, Yu Yin, Lingbing Chen, Ruisheng Wang, Fuming Li
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引用次数: 0

摘要

最近对光子门控持续光谱孔燃烧(PHB)光谱学的兴趣日益增长,部分原因是由于非破坏性读取的可能性[1]和对外部场下细微扰动检测的极高灵敏度[2]。已报道的光子门控PHB体系的机制有两步光电离[3]、两步光脱位[4]、通过三重态-三重态能量转移的双色敏化反应[5]和光子诱导的供体-受体电子转移(DA-ET)反应[1]。三重态瓶颈效应[6]可以通过使用光子门控的PHB在短时间照射后产生可探测的空穴来克服,在几个光子门控的DA- et系统中,PHB在纳秒时间尺度上的成功观测[1,7]表明,考虑到这些系统的性能和各种DA组合,PHB更适用于超高密度光存储。进一步努力寻找具有最佳存储特性的系统并使PHB机制更清晰应该是非常有益的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The photoproduct of Photon-gated spectral hole burning observation in two donor-acceptor electron transfer systems
The recently growing interest in photon-gated persistent spectral hole burning(PHB) spectroscopy is due partly to the possibilities of nondestructive reading[1] and extremely high sensitivity in the detection of subtle perturbations under external fields[2]. The mechanisms of reported photon-gated PHB systems have two-step photoionization[3], two-step photo-decom position[4], two-color sensitization reaction via triplet-triplet energy transfer[5] and photon induced donor-acceptor electron transfer) DA-ET) reactions[1]. The triplet bottleneck effect[6] may be overcome by using photon-gated PHB to produce detectable holes after a short irradiation time, the successful observations of PHB on a nanosecond time scale in several photon-gated DA-ET system [1,7] demonstrated more applicability in ultrahigh density optical storage, considering both the per formance of these reported systems and the variety of DA combinations, further efforts to find systems with optimum storage properties and to make the PHB mechanism clearer should be very rewarding.
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