基于忆阻器的可调谐负群延迟电路

2021 International Conference on Advances in Computing and Communications (ICACC) Pub Date : 2021-10-21 DOI:10.1109/ICACC-202152719.2021.9708356

C. L. Palson, R. K. Sreelal, D. D. Krishna, B. R. Jose

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引用次数: 1

摘要

新一代通信系统的兴起要求高质量的信号传输，显著减少信号失真。因此，为了保证质量，设计了一个三波段负群延迟电路(NGDC)，利用带阻特性来补偿不希望的正群延迟。在这项工作中，L形和U形的存根被蚀刻在50欧姆的传输线上，产生NGD。此外，跨槽连接忆阻器以使组延迟可调谐，其中忆阻器作为可调谐电阻。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Memristor based Tunable Negative Group Delay Circuit

The rise of new generation communication systems requires high-quality signal transmission with significantly less signal distortion. Hence to ensure the quality, a tri-band Negative Group Delay Circuit (NGDC) is designed utilizing bandstop characteristics to compensate for the undesired positive group delays. In this work, L and U shaped stubs are etched on the 50 Ohm transmission line to generate NGD. Further, a memristor is connected across a slot to bring about tunability to the group delays, wherein it acts as a tunable resistance.

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2021 International Conference on Advances in Computing and Communications (ICACC)

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