下一代微电子工艺技术:纳米压印光刻

Jiang Wei, Wang Nan, Yan Wei, Hu Song, Pu Xiao-qiong
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引用次数: 0

摘要

几十年来,在半导体工艺中,图形的转移是通过光学光刻实现的。45纳米节点的生产能力已经形成。但由于光学光刻固有的局限性,目前半导体工业很难按照摩尔定律发展。目前,电子束直写技术、x射线曝光技术和纳米压印技术是下一代图形转印技术的主要技术。纳米压印技术具有收率高、成本低、工艺简单等优点。本文介绍了传统的纳米压印技术及其发展,包括其原理、应用和面临的挑战。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The next generation microelectronics craft technique: Nanoimprint lithography
Transfer of graphics is achieved by optical lithography for several decades in semiconductor process. The production capacity of 45 nm node has been formed. But now semiconductor industry is difficult to be developed according to the Moore law because of the inherent limitations of optical lithography. Now electron-beam directwriting, X-ray exposure and nanoimprint technology are the main technologies for next generation graphics transfer technology. Nanoimprint technology has the advantages of high yield, lowcost and simple process. This paper introduced the traditional nanoimprint technology and its development, including the principle, applications and challenges.
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