用于技术发展的gan -on-蓝宝石场效应管双脉冲特性

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) Pub Date : 2016-05-09 DOI:10.1109/MIKON.2016.7492072

G. P. Gibiino, P. Barmuta, R. Cignani, D. Niessen, A. Lewandowski, L. Dobrzański, D. Schreurs, A. Santarelli

{"title":"用于技术发展的gan -on-蓝宝石场效应管双脉冲特性","authors":"G. P. Gibiino, P. Barmuta, R. Cignani, D. Niessen, A. Lewandowski, L. Dobrzański, D. Schreurs, A. Santarelli","doi":"10.1109/MIKON.2016.7492072","DOIUrl":null,"url":null,"abstract":"A recently published double-pulse technique, useful for the isodynamic pulsed IV characterization of GaN FETs at a fixed charge trapping state, is here applied to the first prototypes of 0.5 µm GaN-on-Sapphire FETs manufactured by the Polish Institute of Electronics Materials Technology. The measurements presented in this work depict a practical method for characterizing trap-related lag effects in GaN FETs, and are intended both for modeling as well as for assisting further technology developments.","PeriodicalId":354299,"journal":{"name":"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Double-pulse characterization of GaN-on-Sapphire FETs for technology development\",\"authors\":\"G. P. Gibiino, P. Barmuta, R. Cignani, D. Niessen, A. Lewandowski, L. Dobrzański, D. Schreurs, A. Santarelli\",\"doi\":\"10.1109/MIKON.2016.7492072\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A recently published double-pulse technique, useful for the isodynamic pulsed IV characterization of GaN FETs at a fixed charge trapping state, is here applied to the first prototypes of 0.5 µm GaN-on-Sapphire FETs manufactured by the Polish Institute of Electronics Materials Technology. The measurements presented in this work depict a practical method for characterizing trap-related lag effects in GaN FETs, and are intended both for modeling as well as for assisting further technology developments.\",\"PeriodicalId\":354299,\"journal\":{\"name\":\"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)\",\"volume\":\"108 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIKON.2016.7492072\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIKON.2016.7492072","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

最近发表的一项双脉冲技术，用于在固定电荷捕获状态下GaN场效应管的等动力脉冲IV表征，在这里被应用于波兰电子材料技术研究所制造的0.5µm GaN-on- sapphire场效应管的第一批原型。这项工作中提出的测量描述了一种实用的方法来表征氮化镓场效应管中与陷阱相关的滞后效应，并旨在建模以及协助进一步的技术发展。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Double-pulse characterization of GaN-on-Sapphire FETs for technology development

A recently published double-pulse technique, useful for the isodynamic pulsed IV characterization of GaN FETs at a fixed charge trapping state, is here applied to the first prototypes of 0.5 µm GaN-on-Sapphire FETs manufactured by the Polish Institute of Electronics Materials Technology. The measurements presented in this work depict a practical method for characterizing trap-related lag effects in GaN FETs, and are intended both for modeling as well as for assisting further technology developments.

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来源期刊

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)

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