扫描电镜上轴TKD表征纳米尺度晶体和缺陷的最新进展

ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis Pub Date : 2021-10-31 DOI:10.31399/asm.cp.istfa2021p0217

D. Goran, T. Schwager, A. Fanta

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引用次数: 0

摘要

先进纳米材料和纳米器件的发展取决于强大而可靠的表征技术的可用性。在此背景下，我们开发了硬件和软件功能，以帮助在扫描电子显微镜(SEM)的方向映射过程中突破空间分辨率限制。

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Recent Developments for the Characterization of Crystals and Defects at the Nanoscale using On-Axis TKD in SEM

The development of advanced nanomaterials and nanodevices is dependent on the availability of powerful and reliable characterization techniques. In this context, we developed hardware and software capabilities to help push the spatial resolution limit during orientation mapping in a Scanning Electron Microscope (SEM).

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ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis

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