SiGe HBT的非线性建模及其在超低相位噪声介质谐振振荡器中的应用

1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282) Pub Date : 1999-06-13 DOI:10.1109/MWSYM.1999.779430

M. Regis, O. Llopis, L. Escotte, R. Plana, A. Gruhle, T. Brazil, M. Chaubet, J. Graffeuil

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引用次数: 8

摘要

我们提出了一个封装SiGe异质结双极晶体管的大信号模型。脉冲I-V测量用于避免热效应。目前的模型与脉冲输出特性和s参数具有良好的相关性，最高可达18 GHz。通过设计超低相位噪声的C波段和X波段介质谐振振荡器，验证了该模型的有效性。

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Nonlinear modeling of a SiGe HBT with applications to ultra low phase noise dielectric resonator oscillators

We propose a large signal model for a packaged SiGe heterojunction bipolar transistor. Pulsed I-V measurements are used to avoid thermal effects. The current model yields excellent correlation with pulsed output characteristics and S-parameters up to 18 GHz. The model's validity is established by designing ultra low phase noise C and X band dielectric resonator oscillators (DROs).

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来源期刊

1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282)

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