双引用和vss -引用存储器总线的SI-PI联合仿真分析

M. Lai, K. Srinivasan, R. Chakraborty, Madhumita Seshadhri
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引用次数: 4

摘要

需要评估双引用和地面引用方案之间的I/O性能差异,以实现电路板或封装上的较低层数,从而降低整体平台成本。现有的方法试图同时量化对PI(功率完整性)和SI(信号完整性)的影响[1],b[2],尽管工作通常集中在I/O功率传输影响上,很少实际量化不同参考方案的影响[1]。对PKG(封装)和BRD(板)上的不同参考方案进行了初步比较。然后进行了进一步的分析,以表征双参考和vss参考的PKG。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
SI-PI cosimulation analysis of dual referencing and VSS-Referencing memory bus
Assessing the I/O performance delta between dual-referencing and ground-referencing schemes is needed to enable a lower layer count on either board or package, thereby reducing the overall platform cost. Existing methodologies attempted in quantifying impact simultaneously on both PI (Power Integrity) and SI (Signal Integrity) [1], [2] although the work is usually focused on I/O power delivery impact and rarely on actually quantifying impact of different referencing schemes [1]. An initial comparison between different referencing schemes on PKG (package) and BRD (board) has been performed. Then a further analysis has been performed to characterize a PKG with Dual referencing and VSS-Referencing.
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