静电约束对硅单电子泵的影响

A. Rossi, T. Tanttu, K. Tan, R. Zhao, K. W. Chan, I. Iisakka, G. Tettamanzi, S. Rogge, M. Mottonen, A. Dzurak
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引用次数: 0

摘要

纳米单电子泵可以作为一种新的电流量子标准的实现。在这里,一个硅量子点可调谐隧道势垒被用作量子化电流的来源。通过精心设计的栅极电极来控制点的静电约束,我们发现泵送机制的鲁棒性可以大大增强,并且由于非绝热转变而产生的有害影响大大减少。我们的泵可以产生超过80pa的电流,实验确定的相对不确定度低于百万分之50。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effects of electrostatic confinement in a silicon single-electron pump
Nanoscale single-electron pumps could serve as the realization of a new quantum standard of electrical current. Here, a silicon quantum dot with tunable tunnel barriers is used as a source of quantized current. By controlling the electrostatic confinement of the dot via purposely engineered gate electrodes, we show that the robustness of the pumping mechanism can be dramatically enhanced and the detrimental effects due to non-adiabatic transitions are largely reduced. Our pump can produce a current in excess of 80 pA with experimentally determined relative uncertainty lower than 50 parts per million.
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