P. Feuerschütz, C. Friesicke, R. Lozar, S. Wagner, T. Maier, P. Brückner, R. Quay, A. Jacob
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Two Q-band power amplifier MMICs in 100 nm AlGaN/GaN HEMT technology
Two power amplifier (PA) MMIC designs with more than 1W of output power in the 37.5–42.5 GHz Q-band downlink band are presented. The circuits are manufactured using the Fraunhofer IAF 100 nm AlGaN/GaN process. The first one is a two-stage design in microstrip line (MSL) technology, whereas the second one is a three-stage design in grounded coplanar waveguide (GCPW) technology, which enables effective output power combining and compact layout at Q-band. A maximum output power of 2.1 W (33.2 dBm) is measured at 39 GHz with a power-added efficiency (PAE) of 14.7%, corresponding to a power density of 1.45 W/mm.
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