{"title":"一种56纳米SOI CMOS x波段低压交叉耦合压控振荡器集成电路","authors":"Lei Sun, Xiao Xu, T. Yoshimasu","doi":"10.1109/IEEE-IWS.2018.8400967","DOIUrl":null,"url":null,"abstract":"An X-band voltage-controlled oscillator (VCO) IC is presented in this paper for low voltage operation. The LC-VCO IC consists of a cross-coupled pMOSFET pair, an LC tank circuit and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully evaluated on-wafer using 56-nm SOI CMOS technology. The fabricated VCO IC has exhibited a measured phase noise of −119.02 dBc/Hz at 5 MHz offset from the 9.8 GHz carrier frequency at an operation voltage of only 0.5 V.","PeriodicalId":163165,"journal":{"name":"2018 IEEE MTT-S International Wireless Symposium (IWS)","volume":"197 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS\",\"authors\":\"Lei Sun, Xiao Xu, T. Yoshimasu\",\"doi\":\"10.1109/IEEE-IWS.2018.8400967\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An X-band voltage-controlled oscillator (VCO) IC is presented in this paper for low voltage operation. The LC-VCO IC consists of a cross-coupled pMOSFET pair, an LC tank circuit and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully evaluated on-wafer using 56-nm SOI CMOS technology. The fabricated VCO IC has exhibited a measured phase noise of −119.02 dBc/Hz at 5 MHz offset from the 9.8 GHz carrier frequency at an operation voltage of only 0.5 V.\",\"PeriodicalId\":163165,\"journal\":{\"name\":\"2018 IEEE MTT-S International Wireless Symposium (IWS)\",\"volume\":\"197 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-06-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE MTT-S International Wireless Symposium (IWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEEE-IWS.2018.8400967\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE MTT-S International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2018.8400967","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An X-band low voltage cross-coupled voltage-controlled oscillator IC in 56-nm SOI CMOS
An X-band voltage-controlled oscillator (VCO) IC is presented in this paper for low voltage operation. The LC-VCO IC consists of a cross-coupled pMOSFET pair, an LC tank circuit and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully evaluated on-wafer using 56-nm SOI CMOS technology. The fabricated VCO IC has exhibited a measured phase noise of −119.02 dBc/Hz at 5 MHz offset from the 9.8 GHz carrier frequency at an operation voltage of only 0.5 V.
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