{"title":"在启动150毫米制造设备期间,使用短周期测试芯片加速良率学习","authors":"J. McDaniel, D. Moursund, C. Silsby, J. Winnett","doi":"10.1109/UGIM.1991.148139","DOIUrl":null,"url":null,"abstract":"A set of electrically tested, short cycle test chips and a methodology were developed to derive yield improvement during the transfer of 1.0 mu m and 0.8 mu m CMOS technologies from high-volume 100-mm facilities to a 150-mm fabrication facility. This resulted in a rapid drop of defect density and the correction of many systematic yield problems before full process lots were affected. The design of the test devices and the methodology is important to the success of the effort utilizing simple, statistically valid, large-scale arrays in the test chips, and a Pareto-driven, brutal focus analysis and improvement methodology. An analysis of shortcomings of using electrically tested structures only was done and possible improvements using optical defect detection equipment were identified.<<ETX>>","PeriodicalId":163406,"journal":{"name":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","volume":"336 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The use of short cycle test chips to accelerate yield learning during the start up of a 150 mm fabrication facility\",\"authors\":\"J. McDaniel, D. Moursund, C. Silsby, J. Winnett\",\"doi\":\"10.1109/UGIM.1991.148139\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A set of electrically tested, short cycle test chips and a methodology were developed to derive yield improvement during the transfer of 1.0 mu m and 0.8 mu m CMOS technologies from high-volume 100-mm facilities to a 150-mm fabrication facility. This resulted in a rapid drop of defect density and the correction of many systematic yield problems before full process lots were affected. The design of the test devices and the methodology is important to the success of the effort utilizing simple, statistically valid, large-scale arrays in the test chips, and a Pareto-driven, brutal focus analysis and improvement methodology. An analysis of shortcomings of using electrically tested structures only was done and possible improvements using optical defect detection equipment were identified.<<ETX>>\",\"PeriodicalId\":163406,\"journal\":{\"name\":\"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium\",\"volume\":\"336 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/UGIM.1991.148139\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings Ninth Biennial University/Government/Industry Microelectronics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/UGIM.1991.148139","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
开发了一套电测试、短周期测试芯片和一种方法,用于将1.0 μ m和0.8 μ m CMOS技术从大批量的100毫米设备转移到150毫米制造设备,从而提高产量。这导致缺陷密度迅速下降,并在整个工艺批次受到影响之前纠正了许多系统良率问题。测试设备和方法的设计对于在测试芯片中使用简单、统计有效、大规模阵列以及帕累托驱动的、残酷的焦点分析和改进方法的努力的成功是重要的。分析了仅使用电测试结构的缺点,并确定了使用光学缺陷检测设备可能进行的改进
The use of short cycle test chips to accelerate yield learning during the start up of a 150 mm fabrication facility
A set of electrically tested, short cycle test chips and a methodology were developed to derive yield improvement during the transfer of 1.0 mu m and 0.8 mu m CMOS technologies from high-volume 100-mm facilities to a 150-mm fabrication facility. This resulted in a rapid drop of defect density and the correction of many systematic yield problems before full process lots were affected. The design of the test devices and the methodology is important to the success of the effort utilizing simple, statistically valid, large-scale arrays in the test chips, and a Pareto-driven, brutal focus analysis and improvement methodology. An analysis of shortcomings of using electrically tested structures only was done and possible improvements using optical defect detection equipment were identified.<>