BaTiO 3 半导体陶瓷从PTC特性向边界层电容效应过渡问题探讨——晶界势垒模型

Science in China Series A-Mathematics, Physics, Astronomy & Technological Science Pub Date : 1994-01-20 DOI:10.1360/ZA1994-24-2-218

郑振华, 缪容之, 陈羽

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摘要

对作者提出的晶界势垒模型作定量分析．由理论模型得到的结果定量解释了BaTiO 3 半导体陶瓷从ＰＴＣ特性向边界层电容效应过渡的有关现象；由此对BaTiO 3 半导体陶瓷边界层电容器和ＰＴＣ电阻器的性能作出了设计，设计值明显优于目前的实验值；对提高器件性能的方法作了探讨，提出了相应的措施．本文的结果为BaTiO 3 半导体陶瓷器件的设计、生产和性能提高提供了理论基础

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BaTiO 3 半导体陶瓷从PTC特性向边界层电容效应过渡问题探讨——晶界势垒模型

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Science in China Series A-Mathematics, Physics, Astronomy & Technological Science

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