S. Glab, M. Baszczyk, P. Dorosz, M. Idzik, W. Kucewicz, M. Sapor, Y. Arai, T. Miyoshi, P. Kapusta, A. Takeda
{"title":"新型SOI技术中的带隙电压基准和温度传感器","authors":"S. Glab, M. Baszczyk, P. Dorosz, M. Idzik, W. Kucewicz, M. Sapor, Y. Arai, T. Miyoshi, P. Kapusta, A. Takeda","doi":"10.1109/ICSES.2014.6948708","DOIUrl":null,"url":null,"abstract":"A bandgap voltage reference together with absolute temperature sensor (PTAT) designed in 200 nm SOI technology is presented in this paper. Three slightly different versions were designed to verify the diode models available in the SOI process. For more extensive SOI process study the chip was fabricated on three different substrates. The bandgap reference circuit generates Vref = 1.27 V with 10 mV chip to chip spread. The best bandgap version has temperature coefficient -35 μV/K. Circuit design, simulations and comparison with measured performance are presented.","PeriodicalId":115109,"journal":{"name":"2014 International Conference on Signals and Electronic Systems (ICSES)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Bandgap voltage reference and temperature sensor in novel SOI technology\",\"authors\":\"S. Glab, M. Baszczyk, P. Dorosz, M. Idzik, W. Kucewicz, M. Sapor, Y. Arai, T. Miyoshi, P. Kapusta, A. Takeda\",\"doi\":\"10.1109/ICSES.2014.6948708\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A bandgap voltage reference together with absolute temperature sensor (PTAT) designed in 200 nm SOI technology is presented in this paper. Three slightly different versions were designed to verify the diode models available in the SOI process. For more extensive SOI process study the chip was fabricated on three different substrates. The bandgap reference circuit generates Vref = 1.27 V with 10 mV chip to chip spread. The best bandgap version has temperature coefficient -35 μV/K. Circuit design, simulations and comparison with measured performance are presented.\",\"PeriodicalId\":115109,\"journal\":{\"name\":\"2014 International Conference on Signals and Electronic Systems (ICSES)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 International Conference on Signals and Electronic Systems (ICSES)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSES.2014.6948708\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Signals and Electronic Systems (ICSES)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSES.2014.6948708","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Bandgap voltage reference and temperature sensor in novel SOI technology
A bandgap voltage reference together with absolute temperature sensor (PTAT) designed in 200 nm SOI technology is presented in this paper. Three slightly different versions were designed to verify the diode models available in the SOI process. For more extensive SOI process study the chip was fabricated on three different substrates. The bandgap reference circuit generates Vref = 1.27 V with 10 mV chip to chip spread. The best bandgap version has temperature coefficient -35 μV/K. Circuit design, simulations and comparison with measured performance are presented.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
