微电子封装用下填料的TSDC测量

K.C. Cheng, Z. Peng, C. S. Wong, H. Chan
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引用次数: 0

摘要

采用热激退极化电流(TSDC)技术研究了微电子封装用下填料的介电弛豫特性。利用TSDC光谱分析了下填料电学性能与极化温度、极化场和升温速率的关系。观察到与下填料玻璃化转变温度T/sub g/相关的单/spl α /弛豫峰。可以估计出Tg的值,并将其与差示扫描量热法(DSC)测定的T/sub g/进行比较。通过TSDC测量,确定了下填料的介电弛豫活化能和弛豫时间。
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TSDC measurements of underfill encapsulant used in microelectronic packaging
The thermal stimulated depolarization current (TSDC) technique was used to study the dielectric relaxation of underfill encapsulant used in microelectronic packaging. The dependence of electrical properties of the underfill on the polarizing temperature, polarizing field and heating rate were analyzed from the TSDC spectra as a function of temperature. A single /spl alpha/-relaxation peak associated with the glass transition temperature T/sub g/ of the underfill was observed. A value of Tg can be estimated which can be compared to the T/sub g/ determined by differential scanning calorimetry (DSC). The activation energy and relaxation time of the dielectric relaxation of the underfill were determined from the TSDC measurements.
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