二元金属栅极摩尔分数变化对SON MOSFET器件性能的影响

2014 International Conference on Advances in Electrical Engineering (ICAEE) Pub Date : 2014-06-19 DOI:10.1109/ICAEE.2014.6838567

Gargee Bhattacharyya, Sharmistha Shee, P. Dutta, S. Sarkar

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引用次数: 1

摘要

二元金属合金栅极中连续水平摩尔分数变化的功函数工程已经在无硅(SON) MOSFET上提出。目前，二元合金栅沿垂直和水平方向摩尔分数变化的功函数工程的概念被解析地应用于我们的模型中。研究了这种垂直摩尔分数变化对各种器件参数(如阈值电压、漏极电流、跨导、漏极电导和电压增益)的影响，并与Manna等人提出的模型进行了比较，观察到整体性能的改善。

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Influence of mole fraction variation of binary metal gate on SON MOSFET device performance

Work function engineering with continuous horizontal mole fraction variation in a binary metal alloy gate has been proposed already on silicon on nothing (SON) MOSFET. Presently, concept of work function engineering by mole fraction variation along both vertical as well as horizontal direction in a binary alloy gate is applied analytically in our model. Effects of this vertical mole fraction variation on various device parameters such as threshold voltage, drain current, transconductance, drain conductance and voltage gain are studied and compared with the model suggested by Manna et al. and an improvement of overall performance has been observed.

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2014 International Conference on Advances in Electrical Engineering (ICAEE)

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