{"title":"三独立栅极场效应晶体管的BCB基准测试","authors":"Jorge Romero-González, P. Gaillardon","doi":"10.1049/PBCS039E_CH10","DOIUrl":null,"url":null,"abstract":"In this book chapter, a detailed explanation is given for the introduction of TIGFET devices into the BCB methodology. The fundamental principles of TIGFET technology are presented. The intrinsic device model under consideration is described and the basic circuit-level opportunities are investigated. The equations for area, delay, energy, and power for the various circuits are listed and the results are outlined and thoroughly examined.","PeriodicalId":270370,"journal":{"name":"Functionality-Enhanced Devices An alternative to Moore's Law","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"BCB benchmarking for three-independent-gate field effect transistors\",\"authors\":\"Jorge Romero-González, P. Gaillardon\",\"doi\":\"10.1049/PBCS039E_CH10\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this book chapter, a detailed explanation is given for the introduction of TIGFET devices into the BCB methodology. The fundamental principles of TIGFET technology are presented. The intrinsic device model under consideration is described and the basic circuit-level opportunities are investigated. The equations for area, delay, energy, and power for the various circuits are listed and the results are outlined and thoroughly examined.\",\"PeriodicalId\":270370,\"journal\":{\"name\":\"Functionality-Enhanced Devices An alternative to Moore's Law\",\"volume\":\"72 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Functionality-Enhanced Devices An alternative to Moore's Law\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/PBCS039E_CH10\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Functionality-Enhanced Devices An alternative to Moore's Law","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/PBCS039E_CH10","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
BCB benchmarking for three-independent-gate field effect transistors
In this book chapter, a detailed explanation is given for the introduction of TIGFET devices into the BCB methodology. The fundamental principles of TIGFET technology are presented. The intrinsic device model under consideration is described and the basic circuit-level opportunities are investigated. The equations for area, delay, energy, and power for the various circuits are listed and the results are outlined and thoroughly examined.
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