用于太赫兹应用的增益增强单级宽带InP HBT放大器

2022 16th International Conference on Ubiquitous Information Management and Communication (IMCOM) Pub Date : 2022-01-03 DOI:10.1109/IMCOM53663.2022.9721734

Waseem Abbas, M. Seo

{"title":"用于太赫兹应用的增益增强单级宽带InP HBT放大器","authors":"Waseem Abbas, M. Seo","doi":"10.1109/IMCOM53663.2022.9721734","DOIUrl":null,"url":null,"abstract":"A 250 nm indium phosphide (InP) heterojunction bipolar transistor (HBT) based wideband and novel gain- boosted single-ended power amplifier is presented for millimeter-wave frequency range. A common-emitter configuration is used with feedback embedding network to boost the gain upto Gmax (Maximum Achievable Gain) from Gma (Maximum Available Gain) of HBT. We achieved the Gma up to U (Mason’s Gain) due to the instability of HBT. The achieved power gain is 7.2-dB with 61 GHz bandwidth (285- 346 GHz), and the power consumption is 114 mW. The ultrawideband and high gain characteristic of the proposed amplifier makes it an attractive choice for the wide range of terahertz and next-generation 6G communication circuits.","PeriodicalId":367038,"journal":{"name":"2022 16th International Conference on Ubiquitous Information Management and Communication (IMCOM)","volume":"435 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A gain boosted single stage wideband InP HBT amplifier for terahertz applications\",\"authors\":\"Waseem Abbas, M. Seo\",\"doi\":\"10.1109/IMCOM53663.2022.9721734\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 250 nm indium phosphide (InP) heterojunction bipolar transistor (HBT) based wideband and novel gain- boosted single-ended power amplifier is presented for millimeter-wave frequency range. A common-emitter configuration is used with feedback embedding network to boost the gain upto Gmax (Maximum Achievable Gain) from Gma (Maximum Available Gain) of HBT. We achieved the Gma up to U (Mason’s Gain) due to the instability of HBT. The achieved power gain is 7.2-dB with 61 GHz bandwidth (285- 346 GHz), and the power consumption is 114 mW. The ultrawideband and high gain characteristic of the proposed amplifier makes it an attractive choice for the wide range of terahertz and next-generation 6G communication circuits.\",\"PeriodicalId\":367038,\"journal\":{\"name\":\"2022 16th International Conference on Ubiquitous Information Management and Communication (IMCOM)\",\"volume\":\"435 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-01-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 16th International Conference on Ubiquitous Information Management and Communication (IMCOM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMCOM53663.2022.9721734\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 16th International Conference on Ubiquitous Information Management and Communication (IMCOM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMCOM53663.2022.9721734","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

提出了一种基于250 nm磷化铟(InP)异质结双极晶体管(HBT)的毫米波频段宽带增益增强单端功率放大器。采用共发射极配置和反馈嵌入网络将增益从HBT的最大可用增益(Gma)提升到最大可达增益(Gmax)。由于HBT的不稳定性，我们实现了高达U(梅森增益)的Gma。实现的功率增益为7.2 db，带宽为61 GHz (285 ~ 346 GHz)，功耗为114 mW。该放大器的超宽带和高增益特性使其成为大范围太赫兹和下一代6G通信电路的有吸引力的选择。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A gain boosted single stage wideband InP HBT amplifier for terahertz applications

A 250 nm indium phosphide (InP) heterojunction bipolar transistor (HBT) based wideband and novel gain- boosted single-ended power amplifier is presented for millimeter-wave frequency range. A common-emitter configuration is used with feedback embedding network to boost the gain upto Gmax (Maximum Achievable Gain) from Gma (Maximum Available Gain) of HBT. We achieved the Gma up to U (Mason’s Gain) due to the instability of HBT. The achieved power gain is 7.2-dB with 61 GHz bandwidth (285- 346 GHz), and the power consumption is 114 mW. The ultrawideband and high gain characteristic of the proposed amplifier makes it an attractive choice for the wide range of terahertz and next-generation 6G communication circuits.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2022 16th International Conference on Ubiquitous Information Management and Communication (IMCOM)

自引率

0.00%

发文量