Impact of tunneling length on analog/RF performance of L-shaped TFET

The influence of technological downscaling significantly escalate the vulnerability of semiconductor based devices. The influence of tunneling length variation on the performance of single gate SiGe-based (for source region) L-shaped TFET (SiGe-SGL-TFET) are examined in terms of channel length present between the source and gate oxide (Lateral tunneling length (LT)). This research work carried out to analyze the influence of various LT values on the bending of band at SCJ (source channel junction), Electric field, ON-state current (Ion), ON-voltage (Von) and sub-threshold swing (SS). In addition, the effect of LT variation on analog and high frequency FOMs (figure of merits) also analyzed. SiGe based SGL-TFET shows optimum performance when LT set to 3nm. The Von of proposed device increased as LT increases from 3nm to 9nm. Simulation results show that, enhanced analog/RF FOMs achieved for 3nm LT .