{"title":"无线和射频mos开关的失真行为","authors":"R. Caverly","doi":"10.1109/RWS.2006.1615123","DOIUrl":null,"url":null,"abstract":"RF MOS devices are finding increased use in a variety of wireless systems that require a high degree of functionality, low dc power consumption and easy integration with digital technology. This paper shows the effects of device size and technology (bulk versus SOI) on MOSFET nonlinearities in RF control applications such as series and shunt-connected devices in switch and attenuator applications. A theory is advanced that is verified with distortion measurements on fabricated control devices.","PeriodicalId":244560,"journal":{"name":"2006 IEEE Radio and Wireless Symposium","volume":"264 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Distortion behavior in wireless and RF MOS-based switches\",\"authors\":\"R. Caverly\",\"doi\":\"10.1109/RWS.2006.1615123\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"RF MOS devices are finding increased use in a variety of wireless systems that require a high degree of functionality, low dc power consumption and easy integration with digital technology. This paper shows the effects of device size and technology (bulk versus SOI) on MOSFET nonlinearities in RF control applications such as series and shunt-connected devices in switch and attenuator applications. A theory is advanced that is verified with distortion measurements on fabricated control devices.\",\"PeriodicalId\":244560,\"journal\":{\"name\":\"2006 IEEE Radio and Wireless Symposium\",\"volume\":\"264 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-04-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE Radio and Wireless Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RWS.2006.1615123\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Radio and Wireless Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RWS.2006.1615123","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Distortion behavior in wireless and RF MOS-based switches
RF MOS devices are finding increased use in a variety of wireless systems that require a high degree of functionality, low dc power consumption and easy integration with digital technology. This paper shows the effects of device size and technology (bulk versus SOI) on MOSFET nonlinearities in RF control applications such as series and shunt-connected devices in switch and attenuator applications. A theory is advanced that is verified with distortion measurements on fabricated control devices.
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